Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

Nº de Estoque RS: 218-3032Marca: InfineonPart Number: IPB120N06S4H1ATMA2
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Especificações

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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Informações de estoque temporariamente indisponíveis.

R$ 39.550,00

R$ 39,55 Each (On a Reel of 1000) (Sem VAT)

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

R$ 39.550,00

R$ 39,55 Each (On a Reel of 1000) (Sem VAT)

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more