N-Channel MOSFET, 90 A, 80 V, 3-Pin DPAK Infineon IPD053N08N3GATMA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Width
7.36mm
Series
IPD053N08N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
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R$ 19,88
Each (On a Reel of 2500) (Sem VAT)
2500
R$ 19,88
Each (On a Reel of 2500) (Sem VAT)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Width
7.36mm
Series
IPD053N08N3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products