N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK Infineon IPD60R800CEAUMA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Height
2.41mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Detalhes do produto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 10,76
Each (In a Pack of 25) (Sem VAT)
25
R$ 10,76
Each (In a Pack of 25) (Sem VAT)
25
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 25 - 100 | R$ 10,76 | R$ 269,00 |
| 125 - 225 | R$ 10,38 | R$ 259,50 |
| 250 - 600 | R$ 10,10 | R$ 252,50 |
| 625 - 1225 | R$ 9,56 | R$ 239,00 |
| 1250+ | R$ 9,12 | R$ 228,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Height
2.41mm
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.9V
Detalhes do produto
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products