N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 Infineon IPP65R125C7XKSA1

Nº de Estoque RS: 897-7589Marca: InfineonPart Number: IPP65R125C7XKSA1
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

700 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

101 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

0.9V

Height

4.57mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 Infineon IPP65R125C7XKSA1
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P.O.A.

N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 Infineon IPP65R125C7XKSA1
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

700 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

101 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

0.9V

Height

4.57mm

Series

CoolMOS C7

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more