Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Width
4.4mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.65mm
País de Origem
Malaysia
Detalhes do produto
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 24,76
Each (In a Tube of 50) (Sem VAT)
50
R$ 24,76
Each (In a Tube of 50) (Sem VAT)
50
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
50 - 50 | R$ 24,76 | R$ 1.238,00 |
100 - 200 | R$ 22,63 | R$ 1.131,50 |
250+ | R$ 21,68 | R$ 1.084,00 |
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
TO-220
Series
OptiMOS P
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
137 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10mm
Width
4.4mm
Typical Gate Charge @ Vgs
125 nC @ 10 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
15.65mm
País de Origem
Malaysia
Detalhes do produto
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.