N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1

Nº de Estoque RS: 178-7450Marca: InfineonPart Number: IPT020N10N3ATMA1
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

156 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

10.1mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.58mm

Forward Diode Voltage

1V

Height

2.4mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 70,43

Each (On a Reel of 2000) (Sem VAT)

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1

R$ 70,43

Each (On a Reel of 2000) (Sem VAT)

N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.7 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

156 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

10.1mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.58mm

Forward Diode Voltage

1V

Height

2.4mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Detalhes do produto

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more