Infineon CoolMOS™ CFD N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 IPW65R080CFDAFKSA1
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
391 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
167 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Detalhes do produto
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 197,16
R$ 197,16 Each (Sem VAT)
Padrão
1
R$ 197,16
R$ 197,16 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário |
|---|---|
| 1 - 4 | R$ 197,16 |
| 5 - 9 | R$ 190,21 |
| 10 - 24 | R$ 189,20 |
| 25 - 49 | R$ 179,57 |
| 50+ | R$ 169,54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
391 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
167 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Detalhes do produto
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products