Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1

Nº de Estoque RS: 214-9118Marca: InfineonPart Number: IPW65R125C7XKSA1
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Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C7

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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R$ 1.434,60

R$ 47,82 Each (In a Tube of 30) (Sem VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1

30

Disponível em múltiplos de 30
30R$ 1.434,60
60R$ 2.869,20
90R$ 4.303,80
120R$ 5.738,40
150R$ 7.173,00
180R$ 8.607,60
210R$ 10.042,20
240R$ 11.476,80
270R$ 12.911,40
300R$ 14.346,00
330R$ 15.780,60
360R$ 17.215,20
390R$ 18.649,80
420R$ 20.084,40
450R$ 21.519,00

R$ 1.434,60

R$ 47,82 Each (In a Tube of 30) (Sem VAT)

Infineon CoolMOS™ C7 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-247 IPW65R125C7XKSA1

Informações de estoque temporariamente indisponíveis.

30

Disponível em múltiplos de 30
30R$ 1.434,60
60R$ 2.869,20
90R$ 4.303,80
120R$ 5.738,40
150R$ 7.173,00
180R$ 8.607,60
210R$ 10.042,20
240R$ 11.476,80
270R$ 12.911,40
300R$ 14.346,00
330R$ 15.780,60
360R$ 17.215,20
390R$ 18.649,80
420R$ 20.084,40
450R$ 21.519,00

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C7

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.125 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more