N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

Nº de Estoque RS: 124-9004Marca: InfineonPart Number: IRFB3607PBF
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.66mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

4.82mm

Number of Elements per Chip

1

Height

9.02mm

Minimum Operating Temperature

-55 °C

País de Origem

Mexico

Detalhes do produto

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 15,14

Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF

R$ 15,14

Each (In a Tube of 50) (Sem VAT)

N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Tubo
50 - 50R$ 15,14R$ 757,00
100 - 200R$ 12,91R$ 645,50
250 - 450R$ 12,20R$ 610,00
500 - 1200R$ 11,58R$ 579,00
1250+R$ 10,81R$ 540,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

75 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.66mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Width

4.82mm

Number of Elements per Chip

1

Height

9.02mm

Minimum Operating Temperature

-55 °C

País de Origem

Mexico

Detalhes do produto

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more