Infineon IRG4BC40KPBF IGBT, 42 A 600 V, 3-Pin TO-220AB, Through Hole
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
42 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 8.77mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalhes do produto
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
42 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 8.77mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Detalhes do produto
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products