Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
750 W
Package Type
Super-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
8 → 30kHz
Transistor Configuration
Single
Dimensions
16 x 5.5 x 20.8mm
Maximum Operating Temperature
+175 °C
Energy Rating
500mJ
Minimum Operating Temperature
-55 °C
País de Origem
Mexico
Detalhes do produto
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
R$ 378,98
R$ 378,98 Each (Sem VAT)
Padrão
1
R$ 378,98
R$ 378,98 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 378,98 |
| 10 - 24 | R$ 366,02 |
| 25 - 49 | R$ 355,97 |
| 50 - 99 | R$ 337,31 |
| 100+ | R$ 321,76 |
Documentos Técnicos
Especificações
Brand
InfineonMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
750 W
Package Type
Super-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
8 → 30kHz
Transistor Configuration
Single
Dimensions
16 x 5.5 x 20.8mm
Maximum Operating Temperature
+175 °C
Energy Rating
500mJ
Minimum Operating Temperature
-55 °C
País de Origem
Mexico
Detalhes do produto
Single IGBT over 21A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.


