Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.5mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.3mm
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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R$ 98,30
R$ 9,83 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 98,30
R$ 9,83 Each (In a Pack of 10) (Sem VAT)
Padrão
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 90 | R$ 9,83 | R$ 98,30 |
100 - 240 | R$ 9,50 | R$ 95,00 |
250 - 490 | R$ 9,23 | R$ 92,30 |
500 - 990 | R$ 8,93 | R$ 89,30 |
1000+ | R$ 8,45 | R$ 84,50 |
Documentos Técnicos
Especificações
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.5mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.3mm
Detalhes do produto
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.