P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1

Nº de Estoque RS: 898-6864Marca: InfineonPart Number: SPD30P06PGBTMA1
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Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.7V

Height

2.41mm

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 254,90

R$ 25,49 Each (In a Pack of 10) (Sem VAT)

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 10.

Produção -

Disponível em múltiplos de 10.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

10

Disponível em múltiplos de 10
10R$ 254,90
20R$ 509,80
30R$ 764,70
40R$ 1.019,60
50R$ 1.227,00
60R$ 1.472,40
70R$ 1.717,80
80R$ 1.963,20
90R$ 2.208,60
100R$ 2.454,00
110R$ 2.699,40
120R$ 2.944,80
130R$ 3.190,20
140R$ 3.435,60
150R$ 3.681,00

R$ 254,90

R$ 25,49 Each (In a Pack of 10) (Sem VAT)

P-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon SPD30P06PGBTMA1
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 10.

Produção -

Disponível em múltiplos de 10.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

10

Disponível em múltiplos de 10
10R$ 254,90
20R$ 509,80
30R$ 764,70
40R$ 1.019,60
50R$ 1.227,00
60R$ 1.472,40
70R$ 1.717,80
80R$ 1.963,20
90R$ 2.208,60
100R$ 2.454,00
110R$ 2.699,40
120R$ 2.944,80
130R$ 3.190,20
140R$ 3.435,60
150R$ 3.681,00

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
10 - 40R$ 25,49R$ 254,90
50 - 240R$ 24,54R$ 245,40
250 - 490R$ 20,70R$ 207,00
500 - 1240R$ 18,36R$ 183,60
1250+R$ 14,84R$ 148,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.7V

Height

2.41mm

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more