Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Nº de Estoque RS: 823-5560Marca: InfineonPart Number: SPP15P10PLHXKSA1Distrelec Article No.: 30341447
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Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 183,40

R$ 36,68 Each (In a Pack of 5) (Sem VAT)

Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 5.

Produção -

Disponível em múltiplos de 5.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

5

Disponível em múltiplos de 5
5R$ 183,40
10R$ 366,80
15R$ 550,20
20R$ 733,60
25R$ 917,00
30R$ 1.100,40
35R$ 1.283,80
40R$ 1.467,20
45R$ 1.650,60
50R$ 1.675,00
55R$ 1.842,50
60R$ 2.010,00
65R$ 2.177,50
70R$ 2.345,00
75R$ 2.512,50

R$ 183,40

R$ 36,68 Each (In a Pack of 5) (Sem VAT)

Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 5.

Produção -

Disponível em múltiplos de 5.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

5

Disponível em múltiplos de 5
5R$ 183,40
10R$ 366,80
15R$ 550,20
20R$ 733,60
25R$ 917,00
30R$ 1.100,40
35R$ 1.283,80
40R$ 1.467,20
45R$ 1.650,60
50R$ 1.675,00
55R$ 1.842,50
60R$ 2.010,00
65R$ 2.177,50
70R$ 2.345,00
75R$ 2.512,50

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 36,68R$ 183,40
50 - 120R$ 33,50R$ 167,50
125 - 245R$ 31,73R$ 158,65
250 - 495R$ 29,90R$ 149,50
500+R$ 28,43R$ 142,15

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more