Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Nº de Estoque RS: 914-0194Marca: InfineonPart Number: SPP80P06PHXKSA1Distrelec Article No.: 30284154
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Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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R$ 310,30

R$ 62,06 Each (In a Pack of 5) (Sem VAT)

Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1
Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 5.

Produção -

Disponível em múltiplos de 5.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

5

Disponível em múltiplos de 5
5R$ 310,30
10R$ 620,60
15R$ 930,90
20R$ 1.241,20
25R$ 1.418,50
30R$ 1.702,20
35R$ 1.985,90
40R$ 2.269,60
45R$ 2.553,30
50R$ 2.685,50
55R$ 2.954,05
60R$ 3.222,60
65R$ 3.491,15
70R$ 3.759,70
75R$ 4.028,25

R$ 310,30

R$ 62,06 Each (In a Pack of 5) (Sem VAT)

Infineon SIPMOS® P-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 SPP80P06PHXKSA1

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Padrão

Selecione o tipo de embalagem

Padrão - each

Disponível em múltiplos de 5.

Produção -

Disponível em múltiplos de 5.

Recomendado para pedidos em grandes quantidades. Os itens são embalados prontos para serem inseridos no maquinário, permitindo melhorar a eficiência da produção.

5

Disponível em múltiplos de 5
5R$ 310,30
10R$ 620,60
15R$ 930,90
20R$ 1.241,20
25R$ 1.418,50
30R$ 1.702,20
35R$ 1.985,90
40R$ 2.269,60
45R$ 2.553,30
50R$ 2.685,50
55R$ 2.954,05
60R$ 3.222,60
65R$ 3.491,15
70R$ 3.759,70
75R$ 4.028,25

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 20R$ 62,06R$ 310,30
25 - 45R$ 56,74R$ 283,70
50 - 120R$ 53,71R$ 268,55
125 - 245R$ 50,69R$ 253,45
250+R$ 47,47R$ 237,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

340 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

115 nC @ 10 V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Detalhes do produto

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more