N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

Nº de Estoque RS: 146-4403Marca: IXYSPart Number: IXFA80N25X3
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Width

11.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

4.83mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

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R$ 165,54

Each (Sem VAT)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

R$ 165,54

Each (Sem VAT)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitário
1 - 4R$ 165,54
5 - 9R$ 144,24
10 - 24R$ 139,22
25+R$ 135,36

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Width

11.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

4.83mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more