N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
650 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.56 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
20.26mm
Typical Gate Charge @ Vgs
355 nC @ 10 V nC
Height
26.59mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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Ideate. Create. Collaborate
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Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
650 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.56 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
20.26mm
Typical Gate Charge @ Vgs
355 nC @ 10 V nC
Height
26.59mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products