N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXYS IXFH34N50P3

Nº de Estoque RS: 146-1742Marca: IXYSPart Number: IXFH34N50P3
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar3

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

695 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.26mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Height

21.46mm

Minimum Operating Temperature

-55 °C

País de Origem

United States

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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R$ 127,19

Each (In a Tube of 30) (Sem VAT)

N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXYS IXFH34N50P3

R$ 127,19

Each (In a Tube of 30) (Sem VAT)

N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXYS IXFH34N50P3
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar3

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

695 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.26mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Height

21.46mm

Minimum Operating Temperature

-55 °C

País de Origem

United States

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more