Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
650 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
98 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
R$ 240,38
R$ 240,38 Each (Sem VAT)
Padrão
1
R$ 240,38
R$ 240,38 Each (Sem VAT)
Padrão
1
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário |
---|---|
1 - 5 | R$ 240,38 |
6 - 14 | R$ 210,12 |
15+ | R$ 203,23 |
Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
650 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
98 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+150 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS