Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
500 V
Series
HiperFET
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
R$ 12.356,75
R$ 494,27 Each (In a Tube of 25) (Sem VAT)
25
R$ 12.356,75
R$ 494,27 Each (In a Tube of 25) (Sem VAT)
25
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
500 V
Series
HiperFET
Package Type
TO-264AA
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
270 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS