IXYS HiperFET N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

Nº de Estoque RS: 920-0870Marca: IXYSPart Number: IXFK48N50
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

500 V

Series

HiperFET

Package Type

TO-264AA

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.13mm

Transistor Material

Si

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

270 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

26.16mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Informações de estoque temporariamente indisponíveis.

R$ 12.356,75

R$ 494,27 Each (In a Tube of 25) (Sem VAT)

IXYS HiperFET N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50

R$ 12.356,75

R$ 494,27 Each (In a Tube of 25) (Sem VAT)

IXYS HiperFET N-Channel MOSFET, 48 A, 500 V, 3-Pin TO-264AA IXFK48N50
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

500 V

Series

HiperFET

Package Type

TO-264AA

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.13mm

Transistor Material

Si

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

270 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

26.16mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more