IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

Nº de Estoque RS: 192-641Marca: IXYSPart Number: IXGH30N120B3D1
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Documentos Técnicos

Especificações

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Detalhes do produto

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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R$ 176,44

R$ 176,44 Each (Sem VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

1

Disponível em múltiplos de 1
1R$ 176,44
2R$ 352,88
3R$ 529,32
4R$ 705,76
5R$ 882,20
6R$ 1.058,64
7R$ 1.235,08
8R$ 1.411,52
9R$ 1.587,96
10R$ 1.764,40
11R$ 1.940,84
12R$ 2.117,28
13R$ 2.293,72
14R$ 2.470,16
15R$ 2.646,60

R$ 176,44

R$ 176,44 Each (Sem VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Informações de estoque temporariamente indisponíveis.

1

Disponível em múltiplos de 1
1R$ 176,44
2R$ 352,88
3R$ 529,32
4R$ 705,76
5R$ 882,20
6R$ 1.058,64
7R$ 1.235,08
8R$ 1.411,52
9R$ 1.587,96
10R$ 1.764,40
11R$ 1.940,84
12R$ 2.117,28
13R$ 2.293,72
14R$ 2.470,16
15R$ 2.646,60

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Detalhes do produto

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em