IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

Nº de Estoque RS: 168-4583Marca: IXYSPart Number: IXTH110N25T
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

250 V

Series

Trench

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

694 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

157 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

21.46mm

Detalhes do produto

N-Channel Trench-Gate Power MOSFET, IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Informações de estoque temporariamente indisponíveis.

R$ 4.055,10

R$ 135,17 Each (In a Tube of 30) (Sem VAT)

IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T

30

Disponível em múltiplos de 30
30R$ 4.055,10
60R$ 8.110,20
90R$ 12.165,30
120R$ 16.220,40
150R$ 20.275,50
180R$ 24.330,60
210R$ 28.385,70
240R$ 32.440,80
270R$ 36.495,90
300R$ 40.551,00
330R$ 44.606,10
360R$ 48.661,20
390R$ 52.716,30
420R$ 56.771,40
450R$ 60.826,50

R$ 4.055,10

R$ 135,17 Each (In a Tube of 30) (Sem VAT)

IXYS Trench N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
Informações de estoque temporariamente indisponíveis.

30

Disponível em múltiplos de 30
30R$ 4.055,10
60R$ 8.110,20
90R$ 12.165,30
120R$ 16.220,40
150R$ 20.275,50
180R$ 24.330,60
210R$ 28.385,70
240R$ 32.440,80
270R$ 36.495,90
300R$ 40.551,00
330R$ 44.606,10
360R$ 48.661,20
390R$ 52.716,30
420R$ 56.771,40
450R$ 60.826,50

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

250 V

Series

Trench

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

694 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.3mm

Length

16.26mm

Typical Gate Charge @ Vgs

157 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

21.46mm

Detalhes do produto

N-Channel Trench-Gate Power MOSFET, IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more