Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
500 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
25.07mm
Typical Gate Charge @ Vgs
260 nC @ 15 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
38.2mm
Minimum Operating Temperature
-55 °C
Height
9.6mm
País de Origem
United States
Detalhes do produto
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
R$ 10.286,30
R$ 1.028,63 Each (In a Tube of 10) (Sem VAT)
10
R$ 10.286,30
R$ 1.028,63 Each (In a Tube of 10) (Sem VAT)
10
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Documentos Técnicos
Especificações
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
500 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
25.07mm
Typical Gate Charge @ Vgs
260 nC @ 15 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
38.2mm
Minimum Operating Temperature
-55 °C
Height
9.6mm
País de Origem
United States
Detalhes do produto
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS