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IXYS Linear N-Channel MOSFET, 62 A, 500 V, 4-Pin SOT-227 IXTN62N50L

Nº de Estoque RS: 168-4608Marca: IXYSPart Number: IXTN62N50L
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

500 V

Series

Linear

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

800 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

25.42mm

Length

38.23mm

Typical Gate Charge @ Vgs

550 nC @ 20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

País de Origem

United States

Detalhes do produto

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Informações de estoque temporariamente indisponíveis.

R$ 12.177,00

R$ 1.217,70 Each (In a Tube of 10) (Sem VAT)

IXYS Linear N-Channel MOSFET, 62 A, 500 V, 4-Pin SOT-227 IXTN62N50L

R$ 12.177,00

R$ 1.217,70 Each (In a Tube of 10) (Sem VAT)

IXYS Linear N-Channel MOSFET, 62 A, 500 V, 4-Pin SOT-227 IXTN62N50L
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

62 A

Maximum Drain Source Voltage

500 V

Series

Linear

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

800 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

25.42mm

Length

38.23mm

Typical Gate Charge @ Vgs

550 nC @ 20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

País de Origem

United States

Detalhes do produto

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more