IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

Nº de Estoque RS: 168-4497Marca: IXYSPart Number: MDI75-12A3
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Documentos Técnicos

Especificações

Brand

IXYS

Product Type

IGBT Module

Configuration

Single

Package Type

Y4-M5

Channel Type

Type N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

34 mm

Length

94mm

Height

30mm

Detalhes do produto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Ver tudo em IGBTs

Informações de estoque temporariamente indisponíveis.

R$ 6.133,92

R$ 1.022,32 Each (In a Box of 6) (Sem VAT)

IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

R$ 6.133,92

R$ 1.022,32 Each (In a Box of 6) (Sem VAT)

IXYS MDI75-12A3, Type N-Channel Single IGBT Module, 7-Pin Y4-M5

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Product Type

IGBT Module

Configuration

Single

Package Type

Y4-M5

Channel Type

Type N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

34 mm

Length

94mm

Height

30mm

Detalhes do produto

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more