IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

Nº de Estoque RS: 146-1770Marca: IXYSPart Number: MMIX1F180N25T
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Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

250 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

364 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

5.7mm

País de Origem

Germany

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Informações de estoque temporariamente indisponíveis.

R$ 14.292,20

R$ 714,61 Each (In a Tube of 20) (Sem VAT)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

20

Disponível em múltiplos de 20
20R$ 14.292,20
40R$ 28.584,40
60R$ 42.876,60
80R$ 57.168,80
100R$ 71.461,00
120R$ 85.753,20
140R$ 100.045,40
160R$ 114.337,60
180R$ 128.629,80
200R$ 142.922,00
220R$ 157.214,20
240R$ 171.506,40
260R$ 185.798,60
280R$ 200.090,80
300R$ 214.383,00

R$ 14.292,20

R$ 714,61 Each (In a Tube of 20) (Sem VAT)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T
Informações de estoque temporariamente indisponíveis.

20

Disponível em múltiplos de 20
20R$ 14.292,20
40R$ 28.584,40
60R$ 42.876,60
80R$ 57.168,80
100R$ 71.461,00
120R$ 85.753,20
140R$ 100.045,40
160R$ 114.337,60
180R$ 128.629,80
200R$ 142.922,00
220R$ 157.214,20
240R$ 171.506,40
260R$ 185.798,60
280R$ 200.090,80
300R$ 214.383,00

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

250 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

364 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

5.7mm

País de Origem

Germany

Detalhes do produto

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more