Documentos Técnicos
Especificações
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Detalhes do produto
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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R$ 15,72
Each (In a Tube of 10) (Sem VAT)
10
R$ 15,72
Each (In a Tube of 10) (Sem VAT)
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
10 - 40 | R$ 15,72 | R$ 157,20 |
50 - 90 | R$ 14,68 | R$ 146,80 |
100 - 240 | R$ 14,03 | R$ 140,30 |
250 - 490 | R$ 13,07 | R$ 130,70 |
500+ | R$ 12,23 | R$ 122,30 |
Documentos Técnicos
Especificações
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Detalhes do produto
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.