N-Channel MOSFET, 11.9 A, 30 V, 8-Pin SOIC MagnaChip MDS1528URH
Documentos Técnicos
Especificações
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
27.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
4.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Typical Gate Charge @ Vgs
7.3 nC @ 10 V
Width
3.9mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.5mm
País de Origem
China
Detalhes do produto
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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P.O.A.
25
P.O.A.
25
Ideate. Create. Collaborate
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Documentos Técnicos
Especificações
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
27.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
4.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.9mm
Typical Gate Charge @ Vgs
7.3 nC @ 10 V
Width
3.9mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.5mm
País de Origem
China
Detalhes do produto
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products