P-Channel MOSFET Transistor, 3.5 A, 200 V, 3-Pin TO-220AB Magnatec IRF9620

Nº de Estoque RS: 139-811Marca: MagnatecPart Number: IRF9620
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Especificações

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

40 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

4.83mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.02mm

Detalhes do produto

MOSFETs - P-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

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P.O.A.

P-Channel MOSFET Transistor, 3.5 A, 200 V, 3-Pin TO-220AB Magnatec IRF9620

P.O.A.

P-Channel MOSFET Transistor, 3.5 A, 200 V, 3-Pin TO-220AB Magnatec IRF9620
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

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JOIN FOR FREE

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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

40 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

4.83mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

9.02mm

Detalhes do produto

MOSFETs - P-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em