N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G

Nº de Estoque RS: 178-5359Marca: MicrochipPart Number: DN3765K4-G
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Especificações

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.2mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

MOSFET Transistors, Microchip

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N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G

P.O.A.

N-Channel MOSFET, 300 mA, 650 V Depletion, 3-Pin DPAK Microchip DN3765K4-G
Informações de estoque temporariamente indisponíveis.

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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.2mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

MOSFET Transistors, Microchip