N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G

Nº de Estoque RS: 912-5259Marca: MicrochipPart Number: LND01K1-G
brand-logo
View all in MOSFETs

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Length

3.05mm

Width

1.75mm

Transistor Material

Si

Minimum Operating Temperature

-25 °C

Height

1.3mm

Detalhes do produto

LND01 N-Channel MOSFET Transistors

The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

MOSFET Transistors, Microchip

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Informações de estoque temporariamente indisponíveis.

P.O.A.

N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
Selecione o tipo de embalagem

P.O.A.

N-Channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip LND01K1-G
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

330 mA

Maximum Drain Source Voltage

9 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Depletion

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +0.6 V

Number of Elements per Chip

1

Maximum Operating Temperature

+125 °C

Length

3.05mm

Width

1.75mm

Transistor Material

Si

Minimum Operating Temperature

-25 °C

Height

1.3mm

Detalhes do produto

LND01 N-Channel MOSFET Transistors

The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

MOSFET Transistors, Microchip