N-channel MOSFET,IRF640 18A 200V

Brand

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.51mm

Minimum Operating Temperature

-55 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Height

15.49mm

Width

4.65mm