Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
390 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalhes do produto
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
40
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
40
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
350 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-666
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
390 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
1.7mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalhes do produto


