Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Length
3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Detalhes do produto
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (In a Pack of 20) (Sem VAT)
20
P.O.A.
Each (In a Pack of 20) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
20
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Width
1.4mm
Transistor Material
Si
Length
3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Detalhes do produto


