N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215

Nº de Estoque RS: 124-2289Marca: NexperiaPart Number: BSS138BK,215
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.48V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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R$ 1,39

Each (On a Reel of 3000) (Sem VAT)

N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215

R$ 1,39

Each (On a Reel of 3000) (Sem VAT)

N-Channel MOSFET, 360 mA, 60 V, 3-Pin SOT-23 Nexperia BSS138BK,215
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Bobina
3000 - 3000R$ 1,39R$ 4.170,00
6000 - 12000R$ 1,36R$ 4.080,00
15000 - 27000R$ 1,09R$ 3.270,00
30000 - 57000R$ 1,03R$ 3.090,00
60000+R$ 1,01R$ 3.030,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

360 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.48V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more