N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138BKW,115

Nº de Estoque RS: 792-0897Marca: NexperiaPart Number: BSS138BKW,115
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.48V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1mm

Detalhes do produto

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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R$ 4,38

Each (On a Reel of 50) (Sem VAT)

N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138BKW,115
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R$ 4,38

Each (On a Reel of 50) (Sem VAT)

N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138BKW,115
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Bobina
50 - 550R$ 4,38R$ 219,00
600 - 1450R$ 1,20R$ 60,00
1500+R$ 1,03R$ 51,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.6V

Minimum Gate Threshold Voltage

0.48V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Transistor Material

Si

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1mm

Detalhes do produto

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more