P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 Nexperia BSS84,215
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
País de Origem
China
Detalhes do produto
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 5,83
Each (In a Pack of 10) (Sem VAT)
10
R$ 5,83
Each (In a Pack of 10) (Sem VAT)
10
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 40 | R$ 5,83 | R$ 58,30 |
| 50 - 90 | R$ 5,64 | R$ 56,40 |
| 100 - 240 | R$ 4,79 | R$ 47,90 |
| 250 - 490 | R$ 4,57 | R$ 45,70 |
| 500+ | R$ 4,33 | R$ 43,30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
130 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
País de Origem
China
Detalhes do produto
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products