Dual N/P-Channel-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 Nexperia NX1029X,115

Nº de Estoque RS: 816-0563Marca: NexperiaPart Number: NX1029X,115
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Documentos Técnicos

Especificações

Channel Type

N, P

Maximum Continuous Drain Current

170 mA, 330 mA

Maximum Drain Source Voltage

50 V, 60 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3.6 Ω, 13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V, 0.5 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Detalhes do produto

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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R$ 4,49

Each (In a Pack of 50) (Sem VAT)

Dual N/P-Channel-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 Nexperia NX1029X,115
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R$ 4,49

Each (In a Pack of 50) (Sem VAT)

Dual N/P-Channel-Channel MOSFET, 170 mA, 330 mA, 50 V, 60 V, 6-Pin SOT-666 Nexperia NX1029X,115
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
50 - 100R$ 4,49R$ 224,50
150 - 250R$ 2,78R$ 139,00
300 - 550R$ 2,75R$ 137,50
600 - 1150R$ 2,72R$ 136,00
1200+R$ 2,70R$ 135,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N, P

Maximum Continuous Drain Current

170 mA, 330 mA

Maximum Drain Source Voltage

50 V, 60 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3.6 Ω, 13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V, 0.5 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Detalhes do produto

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more