Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 1,80
Each (On a Reel of 3000) (Sem VAT)
3000
R$ 1,80
Each (On a Reel of 3000) (Sem VAT)
3000
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
4.5 nC @ 10 V
Height
1mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto