Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Nº de Estoque RS: 136-4807Marca: NexperiaPart Number: NX3008CBKS,115
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Documentos Técnicos

Especificações

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Series

NX3008CBKS

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.4 Ω, 4.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Detalhes do produto

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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R$ 4.830,00

R$ 1,61 Each (On a Reel of 3000) (Sem VAT)

Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

R$ 4.830,00

R$ 1,61 Each (On a Reel of 3000) (Sem VAT)

Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N, P

Maximum Continuous Drain Current

200 mA, 350 mA

Maximum Drain Source Voltage

30 V

Series

NX3008CBKS

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.4 Ω, 4.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

990 mW

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Automotive Standard

AEC-Q101

Detalhes do produto

Dual N/P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more