Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-50 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
1 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Detalhes do produto
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
R$ 63,20
R$ 6,32 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 63,20
R$ 6,32 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 90 | R$ 6,32 | R$ 63,20 |
| 100 - 240 | R$ 5,99 | R$ 59,90 |
| 250+ | R$ 5,66 | R$ 56,60 |
Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-2 A
Maximum Collector Emitter Voltage
-50 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
1 W
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Detalhes do produto
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


