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Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215

Nº de Estoque RS: 134-295Marca: NexperiaPart Number: PMV65XP,215
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Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Informações de estoque temporariamente indisponíveis.

R$ 308,00

R$ 6,16 Each (In a Pack of 50) (Sem VAT)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Selecione o tipo de embalagem

R$ 308,00

R$ 6,16 Each (In a Pack of 50) (Sem VAT)

Nexperia P-Channel MOSFET, 3.9 A, 20 V, 3-Pin SOT-23 PMV65XP,215
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
50 - 550R$ 6,16R$ 308,00
600 - 1450R$ 3,35R$ 167,50
1500+R$ 2,86R$ 143,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

76 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.47V

Maximum Power Dissipation

1.92 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more