Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
R$ 116,04
R$ 38,68 Each (In a Pack of 3) (Sem VAT)
Padrão
3
R$ 116,04
R$ 38,68 Each (In a Pack of 3) (Sem VAT)
Padrão
3
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
3 - 27 | R$ 38,68 | R$ 116,04 |
30 - 72 | R$ 36,19 | R$ 108,57 |
75 - 147 | R$ 34,40 | R$ 103,20 |
150 - 297 | R$ 32,11 | R$ 96,33 |
300+ | R$ 29,96 | R$ 89,88 |
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.95V
Minimum Gate Threshold Voltage
1.05V
Maximum Power Dissipation
272 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalhes do produto