Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
148 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
42.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16mm
Minimum Operating Temperature
-55 °C
País de Origem
Philippines
Detalhes do produto
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
4
P.O.A.
Each (Supplied in a Tube) (Sem VAT)
Embalagem de Produção (Tubo)
4
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Verifique novamente mais tarde.
Documentos Técnicos
Especificações
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
148 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.3mm
Typical Gate Charge @ Vgs
42.3 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16mm
Minimum Operating Temperature
-55 °C
País de Origem
Philippines
Detalhes do produto