Nexperia N-Channel MOSFET, 100 A, 60 V, 4-Pin LFPAK, SOT-669 PSMN5R5-60YS,115

Nº de Estoque RS: 798-2996Marca: NexperiaPart Number: PSMN5R5-60YS,115
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

8.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.1mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

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R$ 182,90

R$ 36,58 Each (In a Pack of 5) (Sem VAT)

Nexperia N-Channel MOSFET, 100 A, 60 V, 4-Pin LFPAK, SOT-669 PSMN5R5-60YS,115
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R$ 182,90

R$ 36,58 Each (In a Pack of 5) (Sem VAT)

Nexperia N-Channel MOSFET, 100 A, 60 V, 4-Pin LFPAK, SOT-669 PSMN5R5-60YS,115
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 45R$ 36,58R$ 182,90
50 - 120R$ 34,15R$ 170,75
125 - 245R$ 32,60R$ 163,00
250 - 495R$ 30,44R$ 152,20
500+R$ 28,51R$ 142,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

8.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

56 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.1mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more