Documentos Técnicos
Especificações
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
País de Origem
China
Detalhes do produto
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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R$ 6,26
Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 6,26
Each (In a Pack of 10) (Sem VAT)
Padrão
10
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
10 - 90 | R$ 6,26 | R$ 62,60 |
100 - 240 | R$ 5,02 | R$ 50,20 |
250 - 990 | R$ 4,49 | R$ 44,90 |
1000+ | R$ 3,67 | R$ 36,70 |
Documentos Técnicos
Especificações
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
País de Origem
China
Detalhes do produto
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.