NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23

Nº de Estoque RS: 626-2412PMarca: NXPPart Number: BF861C,215
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Documentos Técnicos

Especificações

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

+25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

País de Origem

China

Detalhes do produto

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
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P.O.A.

NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 to 25mA, 3-Pin SOT-23
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 25mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

+25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

País de Origem

China

Detalhes do produto

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more