Documentos Técnicos
Especificações
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
País de Origem
China
Detalhes do produto
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
3000
P.O.A.
3000
Documentos Técnicos
Especificações
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
7 mA
Maximum Collector Emitter Voltage
5 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
32 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
8 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
5000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 3 x 1.4mm
Maximum Operating Temperature
+175 °C
País de Origem
China
Detalhes do produto