NXP 200V 30A, Dual Silicon Junction Diode, 3-Pin TO-247 BYV72EW-200

Nº de Estoque RS: 484-3104Marca: NXPPart Number: BYV72EW-200
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Documentos Técnicos

Especificações

Brand

NXP

Mounting Type

Through Hole

Package Type

TO-247

Maximum Continuous Forward Current

30A

Peak Reverse Repetitive Voltage

200V

Diode Configuration

Common Cathode

Rectifier Type

Switching

Diode Type

Silicon Junction

Pin Count

3

Maximum Forward Voltage Drop

1.2V

Number of Elements per Chip

2

Peak Reverse Recovery Time

28ns

Peak Non-Repetitive Forward Surge Current

160A

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P.O.A.

Each (In a Pack of 5) (Sem VAT)

NXP 200V 30A, Dual Silicon Junction Diode, 3-Pin TO-247 BYV72EW-200

P.O.A.

Each (In a Pack of 5) (Sem VAT)

NXP 200V 30A, Dual Silicon Junction Diode, 3-Pin TO-247 BYV72EW-200

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Brand

NXP

Mounting Type

Through Hole

Package Type

TO-247

Maximum Continuous Forward Current

30A

Peak Reverse Repetitive Voltage

200V

Diode Configuration

Common Cathode

Rectifier Type

Switching

Diode Type

Silicon Junction

Pin Count

3

Maximum Forward Voltage Drop

1.2V

Number of Elements per Chip

2

Peak Reverse Recovery Time

28ns

Peak Non-Repetitive Forward Surge Current

160A

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em