N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

Nº de Estoque RS: 181-1895Marca: onsemiPart Number: FDMS86181
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Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.85mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

País de Origem

Philippines

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R$ 41,59

Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Selecione o tipo de embalagem

R$ 41,59

Each (In a Pack of 5) (Sem VAT)

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
5 - 5R$ 41,59R$ 207,95
10 - 95R$ 34,21R$ 171,05
100 - 245R$ 29,63R$ 148,15
250 - 495R$ 29,36R$ 146,80
500+R$ 27,80R$ 139,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.85mm

Typical Gate Charge @ Vgs

42 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

País de Origem

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more